2N6661DCSM semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 8874, issue 1 features faster switching low ciss integral source-drain diode high input impedance and high gain description these dual enhancement-mode (normally-off) vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltag e, high input impedance, low input capacitance, and fast sw itching speeds are desired. high reliability screening options are available. dual n C channel enhancement mode mosfet v dss 90v i d 0.9a r ds(on) 4.0 ceramic lcc2 package (underside view) pad 1 C drain 1 pad 4 C drain 2 pad 2 C gate 1 pad 5 C source 2 pad 3 C gate 2 pad 6 C source 1 1 2 6 3 4 5 2.54 0.13 (0.10 0.005) 0.64 0.06 (0.025 0.003) 0.23 (0.009) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 2.29 0.20 (0.09 0.008) rad. a 1.27 0.13 (0.05 0.005) a = 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005) mechanical data dimensions in mm (inches) absolute maximum ratings each side - t case = 25c unless otherwise stated v ds drain - source voltage 90v i d drain current - continuous (t c = 25c) 0.9a - continuous (t c = 100c) 0.7a i dm drain current - pulsed (note 1) 3a v gs gate - source voltage 20v p tot(1) total power dissipation at t mb 25c 6.25w de-rate linearly above 25c 0.050w/c p tot(2) total power dissipation at t amb 25c 0.5w t j ,t stg operating and storage junction temperature range - 55 to +150c thermal data r thj-mb thermal resistance junction C mounting base max 20 c/w r thj-amb thermal resistance junction - ambient max 250 c/w notes: 1) repetitive rating: pulse width limited b y maximum junction temperature. 2) starting t j = 25c, l = 1.46mh, i as = 48a, v dd = 50v, r g = 25 , 3) pulse test: pulse width 380 s, duty cycle , 2%
2N6661DCSM semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 8874, issue 1 static electrical ratings (each side - t case =25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)dss drain C source breakdown voltage v gs = 0v i d = 1.0 a 90 - - v ds = v gs i d = 1.0ma 0.8 - 2 t c = 125c 0.3 - - v gs(th) gate C source threshold voltage t c = -55c - - 2.5 v v gs = 20v v ds = 0v - - 100 i gss gate C source leakage current t c = 125c - - 500 na v ds = 72v v gs = 0v - - 1.0 i dss zero gate voltage drain current t c = 125c - - 100 m a i d(on) on C state drain current (note 3) v ds = 15v v gs = 10v 1.5 - - a v gs = 5v i d = 0.3a - - 5.3 v gs = 10v i d = 1.0a - - 4 r ds(on) drain C source on resistance (note 3) t c = 125c - - 7.5 v gs = 5v i d = 0.3a - - 1.6 v gs = 10v i d = 1.0a - - 4 v ds(on) drain C source on voltage (note 3) t c = 125c - - 7.5 v g fs forward transconductance (note 3) v ds = 7.5v i d = 0.475a 170 - - ms v sd diode forward voltage (note 3) v gs = 0v i s = 0.86a 0.7 - 1.4 v dynamic characteristics c iss input capacitance - 50 - c oss output capacitance - 40 - c rss reverse transfer capacitance v ds = 25v f = 1.0mhz v gs = 0v - 10 - pf t d(on) turn-on delay - 10 - t d(off) turn-off delay time v dd = 25v r gs = 50 i d = 1a (note 3) - 10 - ns matching characteristics fet1 to fet2 v gs(th) m gate C source threshold voltage matching v ds = v gs i d = 1ma - - 25 mv g fsm forward transconductance matching (note 3) v ds = 7.5v i d = 0.475a - - 50 ms
|
